Dipolar spin relaxation of divacancy qubits in silicon carbide

Abstract Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about physics of these important defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin-induced processes divacancy 4H polytype silicon carbide (4H-SiC). We reveal all relevant magnetic field values where longitudinal time T 1 drops resonantly due to coupling either nuclear or electron spins. quantitatively analyze dependence concentration point defect applied provide analytical expression. demonstrate that dipolar plays significant role both as-grown ion-implanted samples it often limits coherence 4H-SiC.